TC1706 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 4 3 w high linearity and high efficiency gaas power fets features 3w typical power at 6 ghz photo enlargement linear power gain: g l = 11 db typical at 6 ghz high linearity: ip3 = 45 dbm typical at 6 ghz via hole source ground suitable for high reliability application breakdown voltage: bv dgo 18 v lg = 0.6 m*, wg = 7.5 mm high power added efficiency: nominal pae of 43 % at 6 ghz tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1706 is a gaas pseudomorphic high electron mobility transistor (phemt), which has high linearity and high power added efficiency. the device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. the long gate length makes the device to have high breakdown voltage. all devices are 100% dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical applications include commercial and military high performance power amplifiers. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 6 ghz v ds = 8 v, i ds = 750 ma 34.5 35.5 dbm g l linear power gain , f = 6 ghz v ds = 8 v, i ds = 750 ma 10 11 db ip3 intercept point of the 3 rd -order intermodulation, f = 6 ghz v ds = 8v, i ds = 750ma,**p scl = 21 dbm 45 dbm pae power added efficiency at 1db compression power, f = 6 ghz 43 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 1.8 a g m transconductance at v ds = 2 v, v gs = 0 v 1275 ms v p pinch-off voltage at v ds = 2 v, i d = 15 ma -1.7*** vo l t s bv dgo drain-gate breakdown voltage at i dgo = 3.75 ma 18 22 vo l t s r th thermal resistance 4 c/w note: * fet with 0.35 m gate length is available for high frequency operation. please contact factory for detail. ** p scl : output power of single carrier level. *** for the tight control of the pinch-off voltage . TC1706?s are divided into 3 groups: (1) TC1706p1519 : vp = -1.5v to -1.9v (2) TC1706p1620 : vp = -1.6v to -2.0v (3) TC1706p1721 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1706 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 4 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 31.5 dbm p t continuous dissipation 11.5 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions units: micrometers chip thickness: 50 gate pad: 76.0 x 59.5 drain pad: 86.0 x 76.0 chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. g d d g d g d g d g d g 1510 ! 12 470 ! 12
TC1706 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 4 typical scattering parameters (t a =25 c ) v ds = 8 v, i ds = 750 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 0.05 0.99534 -38.565 34.809 159.97 0.0056861 70.259 0.38223 -164.03 0.1 0.98622 -69.959 30.076 143.72 0.0098259 54.292 0.46827 -160.28 0.2 0.97253 -108.9 21.191 123.5 0.013846 34.653 0.57268 -163.71 0.3 0.96632 -129.07 15.622 112.78 0.015311 24.509 0.61412 -167.19 0.4 0.96342 -140.71 12.198 106.31 0.015941 18.615 0.63271 -169.39 0.5 0.96192 -148.14 9.9507 101.92 0.016255 14.8 0.64251 -170.76 0.6 0.96106 -153.26 8.3803 98.668 0.016427 12.125 0.64843 -171.63 0.7 0.96054 -156.99 7.227 96.103 0.016528 10.136 0.65243 -172.2 0.8 0.96021 -159.83 6.3465 93.979 0.016587 8.5891 0.65542 -172.56 0.9 0.95999 -162.05 5.6531 92.156 0.016622 7.3428 0.65783 -172.79 1 0.95984 -163.84 5.0934 90.547 0.01664 6.3104 0.65993 -172.91 1.1 0.95975 -165.32 4.6322 89.095 0.016647 5.4359 0.66184 -172.97 1.2 0.95969 -166.55 4.2457 87.763 0.016645 4.6812 0.66366 -172.97 1.3 0.95966 -167.6 3.9171 86.524 0.016636 4.0198 0.66544 -172.93 1.4 0.95966 -168.51 3.6342 85.359 0.016622 3.4328 0.6672 -172.86 1.5 0.95966 -169.29 3.3882 84.255 0.016604 2.906 0.66898 -172.77 1.6 0.95968 -169.98 3.1723 83.2 0.016582 2.4291 0.67079 -172.66 1.7 0.95971 -170.59 2.9811 82.186 0.016557 1.994 0.67263 -172.54 1.8 0.95975 -171.14 2.8107 81.207 0.016529 1.5944 0.67453 -172.4 1.9 0.9598 -171.63 2.6578 80.259 0.016498 1.2255 0.67647 -172.26 frequency s11 s21 s12 s22 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.02 0.005 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 3 1 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1706 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 4 (ghz) mag ang mag ang mag ang mag ang 2 0.95986 -172.07 2.5198 79.338 0.016465 0.8833 0.67846 -172.12 3 0.9629 -174.84 1.6459 69.42 0.0161 -3.15 0.6973 -170.93 4 0.9642 -176.34 1.1945 61.60 0.0155 -5.08 0.7212 -169.73 5 0.9656 -177.31 0.9188 54.48 0.0149 -6.26 0.7465 -168.93 6 0.9670 -178.03 0.7329 47.95 0.0142 -6.78 0.7714 -168.53 7 0.9684 -178.61 0.5996 41.96 0.0136 -6.69 0.7948 -168.42 8 0.9697 -179.11 0.5000 36.46 0.0130 -6.03 0.8162 -168.54 9 0.9709 -179.55 0.4233 31.41 0.0124 -4.86 0.8352 -168.80 10 0.9719 -179.95 0.3629 26.78 0.0119 -3.23 0.8520 -169.16 11 0.9729 179.67 0.3145 22.51 0.0114 -1.19 0.8667 -169.58 12 0.9737 179.32 0.2751 18.58 0.0110 1.18 0.8795 -170.02 13 0.9745 178.98 0.2426 14.95 0.0107 3.82 0.8906 -170.47 14 0.9751 178.65 0.2155 11.60 0.0105 6.67 0.9003 -170.93 15 0.9757 178.34 0.1927 8.49 0.0103 9.65 0.9087 -171.37 16 0.9762 178.04 0.1734 5.61 0.0102 12.70 0.9160 -171.80 17 0.9766 177.74 0.1567 2.94 0.0101 15.77 0.9225 -172.21 18 0.9770 177.45 0.1424 0.46 0.0101 18.81 0.9282 -172.61 * the data does not include gate, drain and source bond wires. small signal model, v ds = 8 v, i ds = 750 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.014 nh rs 0.177 ohm rg 0.155 ohm ls 0.002 nh cgs 13.74 pf cds 1.786 pf ri 0.308 ohm rds 19.83 ohm cgd 0.482 pf rd 0.233 ohm gm 1401 ms ld 0.002 nh t 3.9 psec
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